Wiley - IEEE Ser.: Complete Guide to Semiconductor Devices by Kwok K. Ng (2002, Hardcover, Revised edition)

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Author:Ng, Kwok K. Complete Guide to Semiconductor Devices (Wiley – IEEE). All of our paper waste is recycled within the UK and turned into corrugated cardboard. World of Books USA was founded in 2005.

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Product Information

Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry over the past 50 years. This book is the only quick, practical and balanced survey of the field to semiconductor devices available.

Product Identifiers

PublisherWiley & Sons, Incorporated, John
ISBN-100471202401
ISBN-139780471202400
eBay Product ID (ePID)2261350

Product Key Features

Number of Pages768 Pages
LanguageEnglish
Publication NameComplete Guide to Semiconductor Devices
Publication Year2002
SubjectElectronics / Semiconductors, Electronics / Circuits / General
FeaturesRevised
TypeTextbook
Subject AreaTechnology & Engineering
AuthorKwok K. Ng
SeriesWiley-IEEE Ser.
FormatHardcover

Dimensions

Item Height1.6 in
Item Weight42.8 Oz
Item Length9.5 in
Item Width6.5 in

Additional Product Features

Edition Number2
LCCN2002-511943
Dewey Edition20
Reviews"...I feel that I'm performing a public service for readers by recommending The Complete Guide to Semiconductor Devices , Second Edition...covers just about anything you'd care to know about semiconductors.... This new edition...is a testament to the endurance of the earlier work." ( Chip Scale , March 2003) "...this book...is an impressive achievement...I would recommend its addition to any university library's science or engineering reference collection." ( E-Streams , Vol. 6, No. 5, May 2003) "...a useful text and one that should be available in a well-stocked library..." ( ChemPhysChem , Vol 4(8), 2003)
IllustratedYes
Dewey Decimal621.3815/2
Intended AudienceScholarly & Professional
Edition DescriptionRevised Edition
Lc Classification NumberTk7871.85.N49 2002
Table of ContentPreface. Preface to the First Edition. Introduction. DIODES I: RECTIFIERS. p-n Junction Diode. p-i-n Diode. Schottky-Barrier Diode. Planar-Doped-Barrier (PDB) Diode. Isotype Heterojunction. DIODES II: NEGATIVE RESISTANCE N-SHAPED. Tunnel Diode. Transferred-Electron Device (TED). Resonant-Tunneling Diode. Resonant-Interband-Tunneling (RIT) Diode. Single-Barrier Tunnel Diode. Single-Barrier Tunnel Diode. Single-Barrier Interband-Tunneling Diode. Real-Space-Transfer (RST) Diode. DIODES III: NEGATIVE RESISTANCE S-SHAPED. Metal-Insulator-Semiconductor Switch (MISS). Planar-Doped-Barrier (PDB) Switch. Amorphous Threshold Switch. Heterostructure Hot-Electron Diode (HHED). DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME. Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode. Barrier-Injection Transit-Time (BARITT) Diode. RESISTIVE AND CAPACITIVE DEVICES. Resistor. Metal-Oxide-Semiconductor (MOS) Capacitor. Charge-Coupled Device (CCD). TRANSISTORS I: FIELD-EFFECT. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Junction Field-Effect Transistor (JFET). Metal-Semiconductor Field-Effect Transistor (MESFET). Modulation-Doped Field-Effect Transistor (MODFET). Permeable-Base Transistor. Static-Induction Transistor (SIT). Real-Space-Transfer (RST) Transistor. Planar-Doped Field-Effect Transistor. Surface-Tunnel Transistor. Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET). Stark-Effect Transistor. Velocity-Modulation Transistor (VMT). TRANSISTOR II: POTENTIAL-EFFECT. Bipolar Transistor. Tunneling Hot-Electron-Transfer Amplifier (THETA). Metal-Base Transistor. Bipolar Inversion-Channel Field-Effect Transistor (BICFET). Tunnel-Emitter Transistor (TETRAN). Planar-Doped-Barrier (PDB) Transistor. Heterojunction Hot-Electron Transistor (HHET). Induced-Base Transistor. Resonant-Tunneling Bipolar Transistor (RTBT/RBT). Resonant-Tunneling Hot-Electron Transistor (RHET). Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT). Spin-Valve Transistor. NONVOLATILE MEMORIES. Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor. Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor. THYRISTORS AND POWER DEVICES. Silicon-Controlled Rectifier (SCR). Insulated-Gate Bipolar Transistor (IGBT). Static-Induction Thyristor (SIThy). Unijunction Transistor. PHOTONICS I: LIGHT SOURCES. Light-Emitting Diode (LED). Injection Laser. PHOTONICS II: PHOTODETECTORS. Photoconductor. p-i-n Photodiode. Schottky-Barrier Photodiode. Charge-Coupled Image Sensor (CCIS). Avalanche Photodiode (APD). Phototransistor. Metal-Smiconductor-Metal (MSM) Photodetector. Quantum-Well Infrared Photodetector (QWIP). Quantum-Dot Infrared Photodetector (QDIP). Blocked-Impurity-Band (BIB) Photodetector. Negative-Electron-Affinity (NEA) Photocathode. Photon-Drag Detector. PHOTONICS III: BISTABLE OPTICAL DEVICES. Self-Electrooptic-Effect Device (SEED). Bistable Etalon. PHOTONICS IV: OTHER DEVICES. Solar Cell. Electroabsorption Modulator. Thermistor. Hall Plate. Strain Gauge (Gage). Interdigital Transducer (IDT). Ion-Sensitive Field-Effect Transistor (ISFET). Appendix A: Selected Nonsemiconductor Devices. Appendix B: Physical Phenomena. Appendix C: General Applications of Device Groups. Appendix D: Physical Properties. Appendix E: Background Information. Index.

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